Xiangfeng Lu

Title: Xiangfeng Lu and Porous-Material Manufacturing

Introduction

Xiangfeng Lu is an inventor associated with Beverly, Massachusetts, and Varian Semiconductor Equipment Associates, Inc. His patent work addresses methods for creating porous materials through ion-assisted deposition and related processes.

Latest Patents

The provided information lists one patent for Lu: Ion-Assisted Direct Growth of Porous Materials. The patent describes methods for creating porous materials, including silicon, by modifying a plasma sheath to produce ion beams with different incidence angles. In some embodiments, the beams form a focused ion beam, and the range of angles enables amorphous material deposition. Process parameters can be adjusted to vary porosity and pore size. The patent also describes creating porous oxides by adding oxygen to previously formed porous layers. Lu’s listed portfolio includes 1 patent.

Career Highlights

Lu’s listed invention focuses on controlling material structure during deposition. The described techniques offer ways to adjust pore characteristics and to form porous oxide layers, connecting his patent work with semiconductor materials processing at Varian Semiconductor Equipment Associates, Inc.

Collaborations

The provided information identifies Ludovic Godet and Deepak Arabagatte Ramappa as Lu’s coworkers. Their names are included here as professional associations; the supplied details do not specify their roles in the patent.

Conclusion

Xiangfeng Lu’s listed patent presents approaches for producing and tuning porous materials, reflecting his connection to semiconductor equipment and materials-processing innovation.