The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2014
Filed:
May. 11, 2012
Applicants:
Ludovic Godet, Boston, MA (US);
Xiangfeng LU, Beverly, MA (US);
Deepak Ramappa, Cambridge, MA (US);
Inventors:
Assignee:
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05H 1/24 (2006.01); H01J 37/32 (2006.01); H01L 31/028 (2006.01); C23C 16/24 (2006.01); C23C 16/04 (2006.01); C23C 16/505 (2006.01); H01L 31/0216 (2014.01);
U.S. Cl.
CPC ...
C23C 16/24 (2013.01); H01J 37/32082 (2013.01); H01L 31/0284 (2013.01); C23C 16/045 (2013.01); C23C 16/505 (2013.01); H01L 31/02168 (2013.01); Y02E 10/50 (2013.01);
Abstract
Methods of creating porous materials, such as silicon, are described. In some embodiments, plasma sheath modification is used to create ion beams of various incidence angles. These ion beams may, in some cases, form a focused ion beam. The wide range of incidence angles allows the material to be deposited amorphously. The porosity and pore size can be varied by changing various process parameters. In other embodiments, porous oxides can be created by adding oxygen to previously created layers of porous material.