Xia Li

Title: Inventor Profile: Xia Li

Introduction: Xia Li is an accomplished inventor based in Singapore, known for his significant contributions to the field of semiconductor technology. With four patents to his name, he has been instrumental in advancing the fabrication methods of semiconductor devices, making notable advancements in the industry.

Latest Patents: Xia Li's latest patents include innovative methodologies such as the **Method of Fabricating T-Shaped Recessed Polysilicon Gate Transistors**. This patent describes a comprehensive approach to fabricating a semiconductor transistor device, detailing steps that include creating a lower gate trench, forming gate portions, and developing an intricate T-shaped gate configuration. Another notable patent is the **Methods of Forming Ultra-Thin Buffer Oxide Layers for Gate Dielectrics**, which outlines procedures for establishing ultra-thin buffer oxide layers crucial for effective gate dielectrics.

Career Highlights: Xia Li is affiliated with Chartered Semiconductor Manufacturing Ltd, a prominent corporation in the semiconductor industry. His work focuses on enhancing semiconductor device functionality and performance through innovative fabrication techniques. His insights and expertise have made a significant impact on the organization's technological advancements.

Collaborations: Throughout his career, Xia has collaborated with notable peers such as Chock Hing Gan and James Yong Meng Lee. These collaborations have facilitated knowledge exchange and contributed to the collective goal of advancing semiconductor technology.

Conclusion: Xia Li stands out as an influential inventor in the semiconductor field. Through his inventive methodologies and collaborations, he continues to propel the industry forward, shaping the future of technology with his innovative spirit.