Xi Xiao

Title: Innovations by Xi Xiao in Optoelectronics

Introduction

Xi Xiao is a prominent inventor based in Wuhan, China, known for her contributions to the field of optoelectronics. With a focus on developing advanced photoelectric detectors, she has made significant strides in the industry. Her innovative work has led to the filing of 2 patents, showcasing her expertise and commitment to technological advancement.

Latest Patents

One of Xi Xiao's latest patents is a photoelectric detector that features a silicon layer with a first-doping-type doped region and a germanium layer in contact with the silicon layer. This design includes a silicon nitride waveguide that transmits optical signals and couples them to the germanium layer, which detects and converts the optical signals into electrical signals. Another notable patent is a photodetector with a resonant waveguide structure. This invention includes a substrate and a light absorption layer for detecting optical signals, along with a resonant waveguide structure that facilitates the transmission of these signals through a circular path.

Career Highlights

Xi Xiao works at the Wuhan Optical Valley Information Optoelectronics Innovation Center Co., Ltd., where she continues to push the boundaries of optoelectronic technology. Her work has garnered attention for its innovative approach and practical applications in various fields.

Collaborations

Xi collaborates with talented individuals such as Xiao Hu and Daigao Chen, contributing to a dynamic and innovative work environment. Their combined expertise enhances the development of cutting-edge technologies in optoelectronics.

Conclusion

Xi Xiao's contributions to the field of optoelectronics through her patents and collaborative efforts highlight her role as a leading inventor. Her work not only advances technology but also inspires future innovations in the industry.