The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2025
Filed:
Dec. 04, 2020
Wuhan Optical Valley Information Optoelectronics Innovation Center Co., Ltd, Hubei, CN;
Xiao Hu, Wuhan, CN;
Xi Xiao, Wuhan, CN;
Lei Wang, Wuhan, CN;
Daigao Chen, Wuhan, CN;
Yuguang Zhang, Wuhan, CN;
Miaofeng Li, Wuhan, CN;
Abstract
Provided is a photoelectric detector, comprising: a silicon layer (), the silicon layer () comprising a first-doping-type doped region (); a germanium layer () in contact with the silicon layer (), the germanium layer () comprising a second-doping-type doped region (); and a silicon nitride waveguide (), the silicon nitride waveguide () being arranged surrounding the germanium layer () along the extension directions of at least three side walls of the germanium layer (), wherein the silicon nitride waveguide () is used for transmitting an optical signal and coupling the optical signal to the germanium layer (), and the germanium layer () is used for detecting the optical signal and converting the optical signal into an electrical signal.