The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2026
Filed:
Dec. 14, 2020
Wuhan Optical Valley Information Optoelectronics Innovation Center Co., Ltd, Wuhan, CN;
Xiao Hu, Wuhan, CN;
XI Xiao, Wuhan, CN;
Daigao Chen, Wuhan, CN;
Lei Wang, Wuhan, CN;
Yuguang Zhang, Wuhan, CN;
Miaofeng Li, Wuhan, CN;
Abstract
A laterally structured avalanche photodetector and a manufacturing method therefor. The laterally structured avalanche photodetector comprises: a substrate, comprising a first semiconductor material region (), an avalanche region () being formed in the first semiconductor material region (); a first epitaxial growth layer (), formed as an absorption region (), the upper surface of the first epitaxial growth layer () being a light absorption surface and protruding from the upper surface of the first semiconductor material region (), and the lower surface of the first epitaxial growth layer () being lower than the upper surface of the first semiconductor material region (); and a second epitaxial growth layer (), at least comprising a first portion and a second portion which are located at two sides of the first epitaxial growth layer () in a first direction, the first portion and the second portion respectively covering two side walls of the first epitaxial growth layer () protruding above the first semiconductor material region (), the first portion and the second portion being respectively formed as at least a part of a first charge region () and at least a part of a second charge region (), and the first charge region (), the absorption region (), the second charge region () and the avalanche region () at least partially overlapping in the first direction.