Company Filing History:
Years Active: 2012
Title: Wu-Chun Kao: Innovator in Semiconductor Technology
Introduction
Wu-Chun Kao is a prominent inventor based in Taoyuan County, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in methods that enhance device performance and reliability. His innovative approach has led to the development of a patented method that addresses critical challenges in the industry.
Latest Patents
Wu-Chun Kao holds a patent titled "Method for gate leakage reduction and Vt shift control and complementary metal-oxide-semiconductor device." This invention focuses on a method for reducing gate leakage and controlling the threshold voltage shift. The process involves performing a first ion implantation on both the PMOS and NMOS regions of a substrate to implant fluorine ions, carbon ions, or both into the gate dielectric or semiconductor substrate. A second ion implantation is then conducted solely on the NMOS region, ensuring that the doping concentrations in the PMOS and NMOS regions differ. This differentiation compensates for side effects caused by varying equivalent oxide thicknesses, effectively avoiding threshold voltage shifts.
Career Highlights
Wu-Chun Kao is associated with United Microelectronics Corporation, a leading company in the semiconductor industry. His work at this organization has allowed him to apply his innovative ideas in practical applications, contributing to advancements in semiconductor devices.
Collaborations
Throughout his career, Wu-Chun Kao has collaborated with notable colleagues, including Chien-Liang Lin and Yu-Ren Wang. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.
Conclusion
Wu-Chun Kao's contributions to semiconductor technology through his patented methods demonstrate his commitment to innovation in the field. His work not only addresses current challenges but also paves the way for future advancements in semiconductor devices.