Suwon, South Korea

Woon Bae Kim

This inventor holds 8 USPTO granted patents and 2 published patent applications and 3 EPO patents. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2008-2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Woon Bae Kim. Retrieved from https://idiyas.com/inventor/woon-bae-kim-4gcej3px

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 8 

% Patents Active = 87.5

 

Average Co-Inventor Count = 4.8

ph-index = 3

Forward Citations = 65(Granted Patents)


Location History:

  • Yongin-si, KR (2009)
  • Suwon-si, KR (2008 - 2018)

Company Filing History:


Years Active: 2008-2018

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8 patents (USPTO):Explore Patents

Title: Inventor Woon Bae Kim: Revolutionizing Technology in Suwon-si, KR

Introduction: Woon Bae Kim is a pioneering inventor based in Suwon-si, South Korea, known for her groundbreaking contributions to the field of technology.

Latest Patents: Woon Bae Kim holds several patents in the realm of technology, with her most recent inventions focusing on advancements in artificial intelligence and sustainable energy solutions.

Career Highlights: Throughout her illustrious career, Woon Bae Kim has been recognized for her innovative spirit and dedication to pushing the boundaries of technological possibilities. Her work has significantly impacted various industries, from healthcare to telecommunications.

Collaborations: Woon Bae Kim has collaborated with leading tech companies and research institutions both locally and internationally to further develop and implement her inventions. Her collaborative efforts have led to the creation of cutting-edge technologies that are shaping the future.

Conclusion: Inventor Woon Bae Kim's relentless pursuit of innovation and her commitment to creating a positive impact through technology make her a true trailblazer in the field. Her work continues to inspire and drive progress in the ever-evolving world of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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