Fremont, CA, United States of America

Wonmo Ahn

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Applied Materials, Inc.. Active years: 2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Wonmo Ahn. Retrieved from https://idiyas.com/inventor/wonmo-ahn

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 5(Granted Patents)


Company Filing History:


Years Active: 2016

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1 patent (USPTO):Explore Patents

Title: The Innovative Contributions of Wonmo Ahn

Introduction

Wonmo Ahn is a notable inventor based in Fremont, California. He has made significant contributions to the field of semiconductor manufacturing, particularly through his innovative patent related to etching processes.

Latest Patents

Wonmo Ahn holds a patent titled "Method of etching a boron doped carbon hardmask." This patent describes a method for etching a boron doped hardmask layer. The process involves flowing a gas mixture, including CH, into a processing chamber. A plasma is then formed from this gas, which facilitates the etching of the boron doped hardmask layer. In alternative embodiments, the process gas may also include Cl, SF, and O.

Career Highlights

Ahn is currently employed at Applied Materials, Inc., a leading company in the semiconductor industry. His work focuses on advancing etching techniques that are crucial for the fabrication of microelectronic devices. His innovative approach has contributed to the efficiency and effectiveness of semiconductor manufacturing processes.

Collaborations

Some of his coworkers include Jeong Hyun Yoo and Jun Wan Kim, who collaborate with him on various projects within the company.

Conclusion

Wonmo Ahn's contributions to the field of semiconductor manufacturing through his innovative patent demonstrate his expertise and commitment to advancing technology. His work continues to impact the industry positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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