Applied Materials, Inc.

Wonmo Ahn

Byungkook Kong

Hun Sang Kim

Jeong Hyun Yoo

Jun Wan Kim

In one embodiment, a method is proposed for etching a boron dope hardmask layer. The method includes flowing a process gas comprising at least CHinto a processing chamber. Forming a plasma in the process chamber from the process gas and etching the boron doped hardmask layer in the presence of the plasma. In other embodiments, the process gas utilized to etch the boron doped hardmask layer includes CH, Cl, SFand O.

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Fremont, CA, United States of America

Wonmo Ahn