Rockport, MA, United States of America

William T Levay

USPTO Granted Patents = 2 

Average Co-Inventor Count = 6.4

ph-index = 2

Forward Citations = 5(Granted Patents)


Company Filing History:


Years Active: 2015

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2 patents (USPTO):Explore Patents

Title: Innovations of William T. Levay

Introduction

William T. Levay is an accomplished inventor based in Rockport, MA (US). He has made significant contributions to the field of semiconductor equipment, particularly in ion implantation technology. With a total of two patents to his name, Levay's work has had a notable impact on the efficiency and effectiveness of ion implanters.

Latest Patents

Levay's latest patents include methods for reducing glitching in an ion implanter and a method for implant productivity enhancement. The first patent describes techniques to reduce glitch rates within an ion implanter. In one embodiment, plasma-assisted conditioning is performed, modifying the bias voltage to the extraction electrodes to inhibit the formation of an ion beam. By increasing the power supplied to the plasma generator in the ion source, a high-density plasma is created, which extends from the ion source chamber through the extraction aperture. This energetic plasma conditions the extraction electrodes. Another embodiment involves plasma-assisted cleaning, where the extraction electrodes are moved further from the ion source chamber, using a different source gas to create the plasma. A combination of these modes can be employed to effectively reduce glitches in the ion implanter.

The second patent focuses on a method of processing a workpiece, where the ion chamber is first coated with the desired dopant species and another species. After this conditioning process, a feed gas containing fluorine and the desired dopant is introduced and ionized. Ions are then extracted and accelerated toward the workpiece for implantation without prior mass analysis. The other species used during conditioning may include a Group 3, 4, or 5 element, with boron being a potential desired dopant species.

Career Highlights

Levay is currently associated with Varian Semiconductor Equipment Associates, Inc., where he continues to innovate in the field of semiconductor technology. His work has contributed to advancements in ion implantation processes, enhancing the capabilities of semiconductor manufacturing.

Collaborations

Levay has collaborated with notable colleagues, including Bon-Woong Koo and Peter F. Kurunczi. These collaborations have fostered a productive environment for innovation and development in semiconductor technologies.

Conclusion

William T. Levay's contributions to the field of ion implantation technology through his patents and collaborations highlight his role as a significant inventor in the semiconductor industry. His innovative methods continue to influence the efficiency of ion im

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