Fishkill, NY, United States of America

William H-l Ma


Average Co-Inventor Count = 4.9

ph-index = 8

Forward Citations = 670(Granted Patents)


Company Filing History:


Years Active: 2002-2007

where 'Filed Patents' based on already Granted Patents

10 patents (USPTO):

Title: Innovations of William H-l Ma

Introduction

William H-l Ma is a prominent inventor based in Fishkill, NY (US). He holds a total of 10 patents that showcase his contributions to the field of semiconductor technology. His work primarily focuses on advanced transistor designs and manufacturing methods.

Latest Patents

One of his latest patents is the "Vertical dual gate field effect transistor." This invention provides a method of manufacturing a vertical transistor that is particularly suitable for high-density integration. It features potentially independent gate structures on opposite sides of a semiconductor pillar, which is formed by etching or epitaxial growth in a trench. The gate structure is surrounded by insulating material that is selectively etchable to the isolation material surrounding the transistor. A contact is made to the lower end of the pillar, which serves as the transistor drain, by selectively etching the isolation material relative to the insulating material. The upper end of the pillar is covered by a cap and sidewalls of selectively etchable materials, allowing for gate and source connection openings to be made with good registration tolerance.

Another significant patent is the "Method of independent P and N gate length control of FET device made by sidewall image transfer technique." This invention discloses a method that forms a conductive layer on a substrate and patterns sacrificial structures above it. Sidewall spacers are then formed adjacent to the sacrificial structures using a spacer material capable of undergoing dimensional change. The sacrificial structures are removed, leaving the sidewall spacers in place. Selected sidewall spacers are protected using a sacrificial mask, allowing for selective exposure of unprotected spacers to processing that changes their size. This results in differently sized gate conductors on the substrate, which are then used to form the source, drain, and channel regions adjacent to the gate conductors.

Career Highlights

William H-l Ma is currently employed at International Business Machines Corporation (IBM), where he continues to innovate in the field of semiconductor technology. His work has significantly impacted the design and manufacturing processes of advanced electronic components.

Collaborations

Throughout his career, William has collaborated with notable colleagues, including Mark Charles Hakey and Toshiharu Furukawa. These collaborations have contributed to the advancement of technology in their respective fields.

Conclusion

William H-l Ma is a distinguished inventor whose work in semiconductor technology has led

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