The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2003
Filed:
Mar. 13, 2000
Toshiharu Furukawa, Essex Junction, VT (US);
Mark C. Hakey, Fairfax, VT (US);
Steven J. Holmes, Milton, VT (US);
David V. Horak, Essex Junction, VT (US);
William H-L Ma, Fishkill, NY (US);
Patricia M. Marmillion, Colchester, VT (US);
Donald W. Rakowski, Milton, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Methods are provided that use disposable and permanent films to dope underlying layers through diffusion. Additionally, methods are provided that use disposable films during implantation doping and that provide a surface from which to dope underlying materials. Some of these disposable films can be created from a traditionally non-disposable film and made disposable. In this manner, solvents may be used that do not etch underlying layers of silicon-based materials. Preferably, deep implantation is performed to form source/drain regions, then an anneal step is performed to activate the dopants. A conformal layer is deposited and implanted with dopants. One or more anneal steps are performed to create very shallow extensions in the source/drain regions.