William G Cowden

Title: William G. Cowden: Innovator in ESD Protection Technology

Introduction

William G. Cowden is a notable inventor based in Gilbert, AZ (US), recognized for his contributions to electrostatic discharge (ESD) protection technology. With a total of 2 patents, Cowden has made significant advancements in the field, particularly in the design and functionality of protection devices.

Latest Patents

Cowden's latest patents include innovative designs that enhance ESD protection. One of his patents, titled "ESD protection with integrated LDMOS triggering junction," describes a device that incorporates a semiconductor substrate with a base region and an emitter region. This design allows for effective shunting of ESD discharge current through a breakdown trigger region, which is crucial for protecting electronic components. Another patent, "Protection device and related fabrication methods," outlines a structure that includes bipolar junction transistors and zener diodes, providing a robust solution for ESD protection.

Career Highlights

Throughout his career, Cowden has worked with prominent companies such as NXP USA, Inc. and Freescale Semiconductor, Inc. His experience in these organizations has contributed to his expertise in semiconductor technology and ESD protection devices.

Collaborations

Cowden has collaborated with talented individuals in the field, including Rouying Zhan and Chai Ean Gill. These partnerships have likely fostered innovation and the development of advanced technologies in ESD protection.

Conclusion

William G. Cowden's work in ESD protection technology showcases his innovative spirit and dedication to enhancing electronic device safety. His patents reflect a commitment to advancing the field and protecting sensitive components from electrostatic discharge.