The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2017
Filed:
Feb. 11, 2013
Rouying Zhan, Gilbert, AZ (US);
Chai Ean Gill, Chandler, AZ (US);
William G. Cowden, Gilbert, AZ (US);
Changsoo Hong, Phoenix, AZ (US);
Rouying Zhan, Gilbert, AZ (US);
Chai Ean Gill, Chandler, AZ (US);
William G. Cowden, Gilbert, AZ (US);
Changsoo Hong, Phoenix, AZ (US);
NXP USA, INC., Austin, TX (US);
Abstract
An electrostatic discharge (ESD) protection device includes a semiconductor substrate, a base region in the semiconductor substrate and having a first conductivity type, an emitter region in the base region and having a second conductivity type, a collector region in the semiconductor substrate, spaced from the base region, and having the second conductivity type, a breakdown trigger region having the second conductivity type, disposed laterally between the base region and the collector region to define a junction across which breakdown occurs to trigger the ESD protection device to shunt ESD discharge current, and a gate structure supported by the semiconductor substrate over the breakdown trigger region and electrically tied to the base region and the emitter region. The lateral width of the breakdown trigger region is configured to establish a voltage level at which the breakdown occurs.