Colorado Springs, CO, United States of America

William F Kraus


Average Co-Inventor Count = 2.0

ph-index = 10

Forward Citations = 283(Granted Patents)


Location History:

  • Colorado Springs, CO (US) (1997 - 2001)
  • Palmer Lake, CO (US) (2000 - 2002)

Company Filing History:


Years Active: 1997-2002

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17 patents (USPTO):Explore Patents

Title: The Innovations of William F. Kraus

Introduction

William F. Kraus is a notable inventor based in Colorado Springs, CO (US). He holds a remarkable portfolio of 17 patents, showcasing his contributions to the field of technology and memory systems. His work primarily focuses on advancements in ferroelectric memory technologies.

Latest Patents

Among his latest patents is the "CMOS boosting circuit utilizing ferroelectric capacitors." This invention describes a boosting circuit for ferroelectric memory that employs a NAND-INVERT circuit to control one electrode of a ferroelectric boosting capacitor. The design ensures that only the selected word line in the memory array is affected, allowing for efficient voltage boosting. Another significant patent is the "Reference cell configuration for a 1T/1C ferroelectric memory." This patent outlines a memory cell layout that includes an access transistor and a ferroelectric capacitor, enhancing the performance of ferroelectric memory arrays.

Career Highlights

Kraus has had a distinguished career, working with prominent companies such as Ramtron International Corporation and Hitachi, Ltd. His experience in these organizations has contributed to his innovative approach to memory technology.

Collaborations

Throughout his career, Kraus has collaborated with notable colleagues, including Lark E. Lehman and Dennis R. Wilson. These partnerships have likely fostered a creative environment that has led to significant advancements in their respective fields.

Conclusion

William F. Kraus is a prominent figure in the realm of memory technology, with a strong portfolio of patents that reflect his innovative spirit. His contributions continue to influence the development of advanced memory systems.

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