The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 1999
Filed:
Nov. 14, 1997
Applicant:
Inventors:
Dennis R Wilson, Colorado Springs, CO (US);
William F Kraus, Colorado Springs, CO (US);
Lark E Lehman, Colorado Springs, CO (US);
Steven D Traynor, Colorado Springs, CO (US);
Assignee:
Ramtron International Corporation, Colorado Springs, CO (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
365145 ; 365149 ; 365203 ;
Abstract
A reference cell for a 1T/1C ferroelectric memory includes a transistor of a first polarity type having a gate coupled to a reference cell word line, and a current path coupled between a bit line and an internal reference cell node, a transistor of a second polarity type having a gate coupled to a pre-charge line, and a current path coupled between a source of supply voltage and the internal reference cell node, and a ferroelectric capacitor coupled between the internal reference cell node and ground.