Will Li

Title: Will Li: Innovator in Memory Device Technology

Introduction

Will Li is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of memory device technology, holding a total of 3 patents. His innovative work focuses on enhancing the performance and efficiency of memory cells.

Latest Patents

One of Will Li's latest patents is titled "Reducing read disturb in a semi-circular memory cell of a memory device." This invention involves a memory device that includes an array of split-gate cells, which can operate independently. The control circuitry is designed to perform a sensing operation on a selected first memory cell to detect its threshold voltage while applying specific voltages to optimize performance.

Another notable patent is "Foggy-fine programming for memory cells with reduced number of program pulses." This patent describes techniques for programming memory cells using a minimized number of program loops. The process includes a foggy program pass followed by a fine program pass, ensuring that the threshold voltages of memory cells are aligned for optimal performance.

Career Highlights

Will Li has worked with several notable companies throughout his career. He has been associated with Sabic Global Technologies B.V. and Western Digital Technologies, Inc. His experience in these organizations has contributed to his expertise in memory device technology.

Collaborations

Throughout his career, Will Li has collaborated with talented individuals such as Tong Wu and David Zou. These collaborations have further enriched his work and innovations in the field.

Conclusion

Will Li is a distinguished inventor whose contributions to memory device technology have made a significant impact. His innovative patents and career achievements reflect his dedication to advancing the field.