Reducing read disturb in a semi-circular memory cell of a memory device

Abstract

The memory device includes an array of split-gate cells with first memory cells and second memory cells that can operate independently of one another and are arranged in first side-strings and second-side strings respectively. Control circuitry is configured to perform a sensing operation on a selected first memory cell to detect its threshold voltage. During the sensing operation, the control circuitry applies a reference voltage to the selected first memory cell, applies a first positive voltage to the second memory cells of a plurality of unselected word lines to partially turn on the second memory cells of the unselected word lines, and applies at least one pass voltage to the first memory cells of the unselected word lines to turn on the first memory cells of the unselected word lines. The control circuitry then conducts a current through the selected first memory cell to detect its threshold voltage.