Western Digital Technologies, Inc.

Sandisk Technologies Inc.

Sabic Global Technologies B.v.

Will Li

Liang Li

Ming Hsi Wang

Tong Wu

David Zou

Yichen Wang

Bruce Li

The memory device includes an array of split-gate cells with first memory cells and second memory cells that can operate independently of one another and are arranged in first side-strings and second-side strings respectively. Control circuitry is configured to perform a sensing operation on a selected first memory cell to detect its threshold voltage. During the sensing operation, the control circuitry applies a reference voltage to the selected first memory cell, applies a first positive voltage to the second memory cells of a plurality of unselected word lines to partially turn on the second memory cells of the unselected word lines, and applies at least one pass voltage to the first memory cells of the unselected word lines to turn on the first memory cells of the unselected word lines. The control circuitry then conducts a current through the selected first memory cell to detect its threshold voltage.

Reducing read disturb in a semi-circular memory cell of a memory device

Apparatuses and techniques are described for programming memory cells with a reduced number of program pulses. A program operation includes a first, foggy program pass followed by a second, fine program pass. The number of program loops in the foggy program pass is minimized while providing relatively narrow Vth distributions for the foggy states. The program loops include one or more checkpoint program loops in which a program speed of the memory cells is determined through a read operation. In a next program loop, the fast-programming memory cells are inhibited from programming while the slow-programming memory cells are programmed with a reduced speed by applying a program speed-reducing bit line voltage. This brings the threshold voltage of the slow-programming memory cells into alignment with the threshold voltage of the fast-programming memory cells.

Foggy-fine programming for memory cells with reduced number of program pulses

Polymer compositions having improved electromagnetic (EMI) shielding properties under high temperature are disclosed. The polymer compositions comprise a thermoplastic polymer, stainless steel fiber, and optionally one or more of glass fiber, a conductive filler, a second polymer, and other additives. The disclosed compositions maintain heat resistance and other mechanical properties under high temperatures.

Polymer compositions having improved EMI retention

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Shanghai, China

Will Li