Dongguan, China

Wentao Yang

This inventor holds 3 USPTO granted patents and 1 published patent application and 1 EPO patent. Top assignees: Huawei Technologies Co., Ltd., Other. Active years: 2025-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Wentao Yang. Retrieved from https://idiyas.com/inventor/wentao-yang-pytp3kiv

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 3 

% Patents Active = 100.0

 

Average Co-Inventor Count = 2.9

ph-index = 1


Company Filing History:


Years Active: 2025-2026

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3 patents (USPTO):Explore Patents

Title: Wentao Yang: Innovator in Semiconductor Technology

Introduction

Wentao Yang is a prominent inventor based in Dongguan, China. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on the development of advanced semiconductor devices and related manufacturing methods.

Latest Patents

One of Wentao Yang's latest patents is titled "Semiconductor device and related chip and preparation method." This invention discloses a semiconductor device that includes an N-type drift layer and an N-type field stop layer. The density of free electrons at the N-type field stop layer is higher than that at the N-type drift layer. The N-type field stop layer comprises first type impurity particles and second type impurity particles, with the latter having a greater radius than the former. Additionally, the injection density of the first type impurity particles in the region adjacent to the N-type drift layer is higher than in any other region.

Another notable patent is "Terminal structure of power device and manufacturing method thereof, and power device." This patent describes a terminal structure that includes a substrate and multiple field limiting rings on its first surface. The substrate consists of a drift layer and a doped layer, with the doped layer formed through diffusion from the substrate's surface. The design limits lateral diffusion of impurities in the field limiting rings, enhancing the performance of the power device.

Career Highlights

Wentao Yang has worked with leading technology companies, including Huawei Technologies Co., Ltd. His experience in the industry has allowed him to develop innovative solutions that address the challenges in semiconductor technology.

Collaborations

Throughout his career, Wentao Yang has collaborated with notable professionals in the field, including Boning Huang and Hanna Carfield. These collaborations have contributed to the advancement of his research and inventions.

Conclusion

Wentao Yang is a distinguished inventor whose work in semiconductor technology has led to multiple patents and significant advancements in the field. His contributions continue to influence the development of innovative semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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