The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2026
Filed:
Jun. 28, 2022
Huawei Technologies Co., Ltd., Shenzhen, CN;
Wentao Yang, Dongguan, CN;
Loucheng Dai, Shanghai, CN;
Chaofan Song, Shanghai, CN;
Boning Huang, Dongguan, CN;
Zhihua Liu, Dongguan, CN;
HUAWEI TECHNOLOGIES CO., LTD., Shenzhen, CN;
Abstract
Embodiments of this application disclose a semiconductor device, a related chip, and a preparation method. The semiconductor device includes an N-type drift layer and an N-type field stop layer adjacent to the N-type drift layer. A density of free electrons at the N-type field stop layer is higher than a density of free electrons at the N-type drift layer. The N-type field stop layer includes first type impurity particles and second type impurity particles doped with the first type impurity particles, and a radius of the second type impurity particles is greater than a radius of the first type impurity particles. In the N-type field stop layer, an injection density of the first type impurity particles in a region adjacent to the N-type drift layer is higher than an injection density of the first type impurity particles in any other region.