This inventor holds 2 USPTO granted patents and 4 published patent applications and 1 EPO patent. Top assignees: Huawei Technologies Co., Limited, Huawei Technologies Co., Ltd.. Active years: 2026.
Company Filing History:
1 out of 27,557 
1 out of 2,171 Years Active: 2026
Title: Loucheng Dai: Innovator in Semiconductor Technology
Introduction
Loucheng Dai is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on the development of advanced semiconductor devices and related methods.
Latest Patents
Dai's latest patents include innovative designs for semiconductor devices. One patent describes a semiconductor device that features an N-type drift layer and an N-type field stop layer. This design enhances the density of free electrons, improving the overall performance of the device. Another patent outlines a semiconductor device that includes various layers such as an N-type drift layer, a P-type base layer, and a field stop layer. This invention effectively reduces collector-emitter leakage current in IGBTs, showcasing Dai's expertise in semiconductor technology.
Career Highlights
Throughout his career, Loucheng Dai has worked with notable companies, including Huawei Technologies Co., Limited and Huawei Technologies Co., Ltd. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking innovations in the semiconductor industry.
Collaborations
Dai has collaborated with talented individuals such as Chaofan Song and Boning Huang. These partnerships have fostered a creative environment that has led to the development of advanced semiconductor technologies.
Conclusion
Loucheng Dai is a distinguished inventor whose work in semiconductor technology has made a significant impact. His innovative patents and collaborations highlight his dedication to advancing the field. His contributions continue to shape the future of semiconductor devices.