The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2026
Filed:
Mar. 29, 2023
Huawei Technologies Co., Ltd., Shenzhen, CN;
HUAWEI TECHNOLOGIES CO., LTD., Shenzhen, CN;
Abstract
A terminal structure of a power device includes a substrate and a plurality of field limiting rings disposed on a first surface of the substrate. The substrate includes a drift layer and a doped layer. The doped layer is formed through diffusion inward from the first surface of the substrate. The doped layer and the drift layer are a first conductivity type, and an impurity concentration of the doped layer is greater than an impurity concentration of the drift layer. The field limiting rings are a second conductivity type. In the terminal structure, lateral diffusion of impurities in the field limiting rings is limited through a design of the doped layer.