Hsinchu, Taiwan

Wen-Shan Lee

USPTO Granted Patents = 1 

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2021

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1 patent (USPTO):Explore Patents

Title: Wen-Shan Lee: Innovator in Semiconductor Technology

Introduction

Wen-Shan Lee is an inventor based in Hsinchu City, Taiwan. He is known for his contributions to semiconductor technology, particularly in the development of innovative semiconductor devices. Although he currently holds no granted patents, his work in the field is noteworthy.

Latest Patent Applications

Wen-Shan Lee has filed several patent applications, including a significant one titled "SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME." This application describes a semiconductor device that includes a silicon carbide substrate, an epitaxial layer, a well region, a gate structure, a first insulating pillar, a pair of first dielectric spacers, and a contact feature. The epitaxial layer is disposed on the silicon carbide substrate, and the well region is located within the epitaxial layer. The gate structure is also situated in the epitaxial layer, with the first insulating pillar positioned directly above it. The application details the alignment of the contact feature with the dielectric spacers, showcasing the intricate design of the semiconductor device.

Another application by Wen-Shan Lee is also titled "SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME." This application outlines a semiconductor device that features a silicon carbide substrate, an epitaxial layer, a first electrode, a separated conductive structure, and a source metal layer. The first electrode is located in the epitaxial layer and extends in a specific direction. The separated conductive structure is detailed with its conductive features positioned on opposite sidewalls of the first electrode. The source metal layer is described as covering and electrically connecting the various components of the device.

Conclusion

Wen-Shan Lee's innovative work in semiconductor technology, particularly through his latest patent applications, highlights his potential impact on the field. His contributions, although not yet recognized through granted patents, demonstrate a commitment to advancing semiconductor device design and functionality.

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