The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2026
Filed:
Nov. 28, 2022
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Wen-Shan Lee, Hsinchu City, TW;
Chung-Yeh Lee, Xinpu Township, TW;
Fu-Hsin Chen, Zhudong Township, TW;
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION, Hsinchu, TW;
Abstract
A semiconductor device includes a substrate, an epitaxial layer on the substrate, a well region in the epitaxial layer, an insulating pillar extending into the epitaxial layer, a first doping region in the epitaxial layer and surrounding the insulating pillar, a second doping region under the first doping region, and a gate structure formed at one lateral side of the insulating pillar and extending into the epitaxial layer. The substrate and the epitaxial layer each have a first conductivity type. The well region and the first and second doping regions each have a second conductivity type. The gate structure is separated from the insulating pillar. The insulating pillar penetrates the first doping region by extending from the top portion to the bottom portion of the first doping region. The first doping region is electrically connected to the well region.