The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2021
Filed:
Apr. 30, 2019
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Abstract
A semiconductor device is provided. The semiconductor device includes a substrate having a first conductivity type. An epitaxial layer having the first conductivity type is disposed on the substrate, and a trench is formed in the epitaxial layer. A first well region having a second conductivity type that is different from the first conductivity type is disposed in the epitaxial layer and under the trench. A first gate electrode having the second conductivity type is disposed in the trench, and a second gate electrode is disposed in the trench on the first gate electrode, wherein the second gate electrode is separated from the first gate electrode by a first insulating layer. A method for forming the semiconductor device is also provided.