Location History:
- Tainan Hsien, TW (2002 - 2004)
- Hsin-Chu, TW (2003 - 2009)
Company Filing History:
Years Active: 2002-2009
Title: The Innovative Contributions of Wen-Kuei Hsieh
Introduction
Wen-Kuei Hsieh is a notable inventor based in Tainan Hsien, Taiwan. He has made significant contributions to the field of memory device technology, holding a total of 6 patents. His work focuses on methods that enhance the performance and reliability of flash memory devices.
Latest Patents
Hsieh's latest patents include a method for fabricating a floating gate of flash ROM. This method involves forming a pad oxide layer and a silicon nitride layer on a substrate, followed by the creation of shallow trenches to define an active area. The process includes isotropic etching to expose trench corners, rounding those corners, and forming an STI structure. After removing the pad oxide and silicon nitride layers, a tunneling oxide layer and a first polysilicon layer are formed, with a second polysilicon layer added to create the floating gate. Another significant patent is for a memory device that utilizes multi-etching processes to construct isolation trenches of varying depths, effectively mitigating current leakage and enhancing device performance.
Career Highlights
Wen-Kuei Hsieh is currently employed at Winbond Electronics Corporation, where he continues to innovate in the field of memory technology. His work has been instrumental in advancing the capabilities of flash memory devices, making them more efficient and reliable.
Collaborations
Hsieh has collaborated with notable colleagues, including Chih-Mu Huang and James Juen Hsu. These partnerships have contributed to the development of cutting-edge technologies in the memory device sector.
Conclusion
Wen-Kuei Hsieh's contributions to the field of memory technology are significant and impactful. His innovative patents and collaborations reflect his dedication to advancing the industry.