Hsinchu, Taiwan

Wen-Jui Fu

This inventor holds 2 USPTO granted patents. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 1998-2006.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Wen-Jui Fu. Retrieved from https://idiyas.com/inventor/wen-jui-fu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 50.0

Average Co-Inventor Count = 3.4

ph-index = 1

Forward Citations = 18(Granted Patents)


Location History:

  • Myau-Lih, TW (1998)
  • Hsin-Chu, TW (2006)

Company Filing History:


Years Active: 1998-2006

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2 patents (USPTO):Explore Patents

Title: Innovations by Inventor Wen-Jui Fu

Introduction

Wen-Jui Fu is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in methods that enhance the performance and reliability of integrated circuits. With a total of 2 patents, his work has had a considerable impact on the industry.

Latest Patents

Wen-Jui Fu's latest patents include a method to reduce fluorine contamination on the Al/Al-Cu pad by a post high cathode temperature plasma treatment. This innovative method addresses the issue of fluorine contamination on integrated circuit wafer surfaces. The process involves placing the wafer on a cathode stage and treating it with plasma that includes a reducing gas to form HF from the fluorine, along with a bombardment gas to remove the fluorine from the surface. The heating of the cathode stage increases the rate of fluorine removal, thereby improving the quality of the integrated circuits.

Another significant patent is the method for reducing surface leakage current on semiconductor integrated circuits. This method focuses on minimizing surface leakage current between adjacent bonding pads on integrated circuit substrates after the formation of a patterned polyimide passivation layer. The process utilizes plasma ashing in oxygen to remove residual polyimide, which can lead to high contact resistance and poor chip yield. Additionally, a thermal treatment step in either a nitrogen or air ambient is employed after plasma ashing to eliminate increased surface leakage current and enhance chip yield.

Career Highlights

Wen-Jui Fu is currently employed at Taiwan Semiconductor Manufacturing Company Ltd., where he continues to innovate and contribute to advancements in semiconductor technology. His expertise and dedication to improving integrated circuit performance have made him a valuable asset to the company.

Collaborations

Wen-Jui Fu has collaborated with several talented individuals in his field, including Shang-Ru Shen and Ho-Ku Lan. These collaborations have fostered an environment of innovation and have led to the development of groundbreaking technologies in semiconductor manufacturing.

Conclusion

Wen-Jui Fu's contributions to the semiconductor industry through his innovative patents and collaborative efforts highlight his importance as an inventor. His work continues to influence the development of more efficient and reliable integrated circuits, showcasing the vital role of innovation in technology advancement.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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