The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2006
Filed:
Nov. 12, 2003
Wen-jui Fu, Hsin-Chu, TW;
Shang-ru Shen, Hsin-Chu, TW;
Yun-hung Shen, Hsin-Chu, TW;
Chao-cheng Chen, Hsing-Chin, TW;
Wen-Jui Fu, Hsin-Chu, TW;
Shang-Ru Shen, Hsin-Chu, TW;
Yun-Hung Shen, Hsin-Chu, TW;
Chao-Cheng Chen, Hsing-Chin, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A method of reducing fluorine contamination on a integrated circuit wafer surface is achieved. The method comprises placing an integrated circuit wafer on a cathode stage. The integrated circuit wafer comprises a surface contaminated with fluorine. The integrated circuit wafer is plasma treated with a plasma comprising a reducing gas that forms HF from the fluorine and a bombardment gas that removes the fluorine from the surface. The cathode stage is heated to thereby increase the rate of the fluorine removal.