Wen-Hung Lo

Title: The Innovative Contributions of Wen-Hung Lo

Introduction

Wen-Hung Lo is a notable inventor based in Bade, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent related to MOSFET devices. His work exemplifies the intersection of creativity and technical expertise in modern electronics.

Latest Patents

Wen-Hung Lo holds a patent for a MOSFET having memory characteristics. This patent describes a method for performing a programming operation to a first memory bit and a second memory bit of a device. The method includes applying a pulse train voltage to a metal gate of the device while grounding the substrate. By floating or grounding the drain and/or source of the device, the first and second memory bits are programmed. The pulse train voltage consists of 10 to 1000 pulses, with each pulse including a peak voltage ranging from 0.5 V to 10 V. The duration of the peak voltage can vary from 1 nanosecond to 1 millisecond, while the base voltage is set at 0 V, also lasting from 1 nanosecond to 1 millisecond.

Career Highlights

Wen-Hung Lo is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His role at the company allows him to apply his innovative ideas and contribute to the advancement of semiconductor technology. His patent reflects his commitment to enhancing device performance and memory capabilities.

Collaborations

Wen-Hung Lo has collaborated with several talented individuals in his field, including Shih-Chieh Chang and Ting-Chang Chang. These collaborations have likely fostered an environment of innovation and creativity, leading to advancements in semiconductor technology.

Conclusion

Wen-Hung Lo's contributions to the field of semiconductor technology through his patent on MOSFET devices highlight his innovative spirit and technical expertise. His work continues to influence the development of advanced electronic devices.