The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2014
Filed:
Aug. 09, 2012
Ting-chang Chang, Kaohsiung, TW;
Chih-hao Dai, Kaohsiung, TW;
Fu-yen Jian, Kaohsiung, TW;
Wen-hung Lo, Bade, TW;
Shih-chieh Chang, Taipei, TW;
Ying-lang Wang, Tien-Chung Village, TW;
Ting-Chang Chang, Kaohsiung, TW;
Chih-Hao Dai, Kaohsiung, TW;
Fu-Yen Jian, Kaohsiung, TW;
Wen-Hung Lo, Bade, TW;
Shih-Chieh Chang, Taipei, TW;
Ying-Lang Wang, Tien-Chung Village, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method for performing a programming operation to a first memory bit and a second memory bit of a device is described. The method includes applying a pulse train voltage to a metal gate of the device and grounding a substrate of the device. By floating/grounding a drain of the device and/or by floating/grounding the source of the device, the first memory and the second memory bit are programmed. The pulse train voltage includes 10 to 1000 pulses. One pulse includes a peak voltage and a base voltage. The peak voltage ranges from 0.5 V to 10 V. A duration of the peak voltage ranges from 1 nanosecond to 1 millisecond. The base voltage is 0 V. A duration of the base voltage ranges from 1 nanosecond to 1 millisecond.