Hsinchu, Taiwan

Wen-Hsun Lo

This inventor holds 2 USPTO granted patents and 1 published patent application. Top assignee: Vanguard International Semiconductor Corporation. Active years: 2010-2012.

USPTO Granted Patents = 2 

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2010-2012

Loading Chart...
2 patents (USPTO):Explore Patents

Title: Innovations of Inventor Wen-Hsun Lo

Introduction

Wen-Hsun Lo is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology. With a total of 2 patents to his name, his work has had a considerable impact on the industry.

Latest Patents

Wen-Hsun Lo's latest patents include a method for forming a semiconductor structure. This invention provides a detailed process for creating a semiconductor structure, which involves several steps including the formation of a conductive layer and the use of patterned mask layers. Another significant patent is a method for fabricating a semiconductor device with a fuse element. This method outlines the steps for creating a semiconductor structure that includes a fuse element, detailing the formation of various dielectric layers and etching processes.

Career Highlights

Wen-Hsun Lo is currently employed at Vanguard International Semiconductor Corporation. His work at this company has allowed him to further develop his expertise in semiconductor technologies. His innovative approaches have contributed to advancements in the field.

Collaborations

Wen-Hsun Lo has collaborated with several talented individuals, including Jin-Dong Chern and Hsing-Chao Liu. These collaborations have fostered a creative environment that encourages innovation and the development of new technologies.

Conclusion

Wen-Hsun Lo is a distinguished inventor whose work in semiconductor technology has led to valuable patents and advancements in the industry. His contributions continue to influence the field and inspire future innovations.

Profile summary based on public USPTO records.
Please report any incorrect information to [email protected]
Loading…