The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2012
Filed:
Sep. 18, 2009
Wen-hsun Lo, Hsinchu County, TW;
Hsing-chao Liu, Hsinchu County, TW;
Jin-dong Chern, Taoyuan County, TW;
Po-shun Huang, Hsinchu, TW;
Wen-Hsun Lo, Hsinchu County, TW;
Hsing-Chao Liu, Hsinchu County, TW;
Jin-Dong Chern, Taoyuan County, TW;
Po-Shun Huang, Hsinchu, TW;
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Abstract
The invention provides a method for forming a semiconductor structure. A substrate is provided. A conductive layer is formed on the substrate. A first patterned mask layer is formed on the conductive layer. The conductive layer exposed by the first patterned mask layer is removed to expose a first sidewall of the conductive layer. A doped region is formed in the substrate by a doping step using the first patterned mask layer as a mask. The first patterned mask layer is removed. A second patterned mask layer is formed on the conductive layer. The conductive layer exposed by the second patterned mask layer is removed to expose a second sidewall opposite to the first sidewall of the conductive layer. The second patterned mask layer is removed.