Anding, Taiwan

Wen-Hsien Lin


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2011-2013

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2 patents (USPTO):Explore Patents

Title: Innovations of Inventor Wen-Hsien Lin

Introduction

Wen-Hsien Lin is a notable inventor based in Anding, Taiwan. He has made significant contributions to the field of light-emitting diodes (LEDs), particularly through his innovative designs and manufacturing methods. With a total of 2 patents, Lin's work has advanced the technology behind vertical light-emitting diodes.

Latest Patents

One of Lin's latest patents is focused on a vertical light-emitting diode (VLED). This invention describes a VLED and its manufacturing method that utilizes a combination of a reflective layer, a transparent conducting layer, and a transparent dielectric layer. These structural layers promote uniform current distribution and enhance light extraction. In this VLED, a transparent conducting layer is formed on the first outer surface of a stack of multiple group III nitride semiconductor layers. A transparent dielectric layer is then created on the side of the transparent conducting layer that is opposite the multi-layer structure. Additionally, a first electrode structure is formed on the transparent dielectric layer, establishing electrical contact with the transparent conducting layer through a series of contact windows patterned through the dielectric layer. The use of these layers significantly improves light extraction.

Another patent by Lin details a method for manufacturing a vertical type light-emitting diode. In this method, a multilayered structure of group III nitride semiconductor compounds is epitaxially deposited on an irregular surface of a substrate. The substrate is subsequently removed to reveal an irregular surface of the multilayered structure that corresponds to the substrate's irregular surface. A portion of this exposed irregular surface is then etched to create an electrode contact surface, where an electrode layer is later formed. This innovative method eliminates the need for a specific planarized region on the substrate's irregular surface, thus avoiding the necessity for planarization treatment. The same substrate can be reused for fabricating both vertical and horizontal light-emitting diodes.

Career Highlights

Wen-Hsien Lin is currently employed at Tekcore Co., Ltd., where he continues to develop cutting-edge technologies in the field of LEDs. His work has garnered attention for its practical applications and innovative approaches to semiconductor technology.

Collaborations

Lin has collaborated with several talented individuals in his field, including Wei-Jung Chung and Shih-Hung Lee. These collaborations have contributed to the advancement of LED technology and the successful development of new inventions

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