The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2013
Filed:
Jul. 30, 2010
Wei-jung Chung, Pingtung, TW;
Shih-hung Lee, Caotun Township, Nantou County, TW;
Cheng-hsien LI, Kaohsiung, TW;
Wen-hsien Lin, Anding Township, Tainan County, TW;
Nien-tze Yeh, Zhongli, TW;
Wei-Jung Chung, Pingtung, TW;
Shih-Hung Lee, Caotun Township, Nantou County, TW;
Cheng-Hsien Li, Kaohsiung, TW;
Wen-Hsien Lin, Anding Township, Tainan County, TW;
Nien-Tze Yeh, Zhongli, TW;
Tekcore Co., Ltd., Nantou, TW;
Abstract
The present application describes a vertical light-emitting diode (VLED) and its manufacture method that use the combination of a reflective layer, a transparent conducting layer and transparent dielectric layer as structural layers for promoting uniform current distribution and increasing light extraction. In the VLED, a transparent conducting layer is formed on a first outer surface of a stack of multiple group III nitride semiconductor layers. A transparent dielectric layer is then formed on a side of the transparent conducting layer opposite the side of the multi-layer structure. A first electrode structure is then formed on the transparent dielectric layer in electrical contact with the transparent conducting layer via a plurality of contact windows patterned through the transparent dielectric layer. The transparent conducting layer and the transparent dielectric layer are used as structural layers for improving light extraction.