The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2011
Filed:
Jul. 30, 2010
Wei-jung Chung, Pingtung, TW;
Shih-hung Lee, Caotun Township, Nantou County, TW;
Cheng-hsien LI, Kaohsiung, TW;
Wen-hsien Lin, Anding Township, Tainan County, TW;
Nien-tze Yeh, Zhongli, TW;
Wei-Jung Chung, Pingtung, TW;
Shih-Hung Lee, Caotun Township, Nantou County, TW;
Cheng-Hsien Li, Kaohsiung, TW;
Wen-Hsien Lin, Anding Township, Tainan County, TW;
Nien-Tze Yeh, Zhongli, TW;
Tekcore Co., Ltd., Nantou, CN;
Abstract
In a method of manufacturing a vertical type light-emitting diode, a multilayered structure of group III nitride semiconductor compounds is epitaxy deposited on an irregular surface of a substrate. The substrate is then removed to expose an irregular surface of the multilayered structure corresponding to the irregular surface of the substrate. A portion of the exposed irregular surface of the multilayered structure is then etched for forming an electrode contact surface on which an electrode layer is subsequently formed. With this method, no specific planarized region is required on the irregular surface of the substrate. As a result, planarization treatment of the substrate is not necessary. The same substrate with the irregular surface can be reused for fabricating vertical and horizontal light-emitting diodes.