Location History:
- Taoyuan, TW (2004 - 2006)
- Taoyuan County, TW (2007)
Company Filing History:
4 out of 76 
2 out of 144 Years Active: 2004-2007
Title: Innovations of Wen-How Lan in Semiconductor Technology
Introduction
Wen-How Lan is a prominent inventor based in Taoyuan, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 6 patents. His work primarily focuses on nitride-based semiconductor laser diode devices, which have important applications in various electronic and optical systems.
Latest Patents
One of his latest patents is a nitride-based semiconductor laser diode device featuring a bar mask. This innovative device comprises a selective growth mask with a grating structure. The island-like stacked epitaxial layers, including the P-type cladding layer, are formed from the selective growth mask upon the active layer of the semiconductor laser structure. This proposed structure effectively reduces strain caused by deformation due to the isolated structure. Consequently, it allows for an increase in the thickness of the cladding layer and/or an increase in composition difference without the risk of cracks in the island-like stacked epitaxial layers. Additionally, the optical confinement can be significantly improved.
Career Highlights
Wen-How Lan has worked with notable companies in the semiconductor industry, including Formosa Epitaxy Incorporation and Chung Shan Institute of Science and Technology. His experience in these organizations has contributed to his expertise and innovative capabilities in semiconductor technology.
Collaborations
Throughout his career, Wen-How Lan has collaborated with several talented individuals, including Lung-Chien Chen and Fen-Ren Chien, who is a woman. These collaborations have further enhanced his research and development efforts in the field.
Conclusion
Wen-How Lan's contributions to semiconductor technology, particularly in the development of nitride-based laser diode devices, showcase his innovative spirit and dedication to advancing the field. His patents reflect a commitment to improving optical confinement and reducing structural strain, which are crucial for the future of semiconductor applications.