The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2006
Filed:
Dec. 29, 2003
Wen-how Lan, Taoyuan, TW;
Kuang-neng Yang, Hsinchu Hsien, TW;
Lung-chien Chen, Hsin-Chuang, TW;
Fen-ren Chien, Yung-Ho, TW;
Wen-How Lan, Taoyuan, TW;
Kuang-Neng Yang, Hsinchu Hsien, TW;
Lung-Chien Chen, Hsin-Chuang, TW;
Fen-Ren Chien, Yung-Ho, TW;
Formosa Epitaxy Incorporation, Taoyuan, TW;
Abstract
A method for manufacturing a GaN-based light-emitting diode (LED) is provided with the following steps of: providing a substrate; forming a GaN semiconductor epitaxy layer on the substrate, the GaN semiconductor epitaxy layer further including an n-type GaN contact layer, a light-emitting layer and a p-type GaN contact layer; forming a digital penetration layer on the p-type GaN contact layer; using a multi-step dry etching method to etch the digital penetration layer, the p-type GaN contact layer, the light-emitting layer to form an n-metal forming area, etching terminating at the light-emitting layer; forming a first ohmic contact electrode on the digital penetration layer for a p-type ohmic contact layer and a second ohmic contact electrode on the n-metal forming area for an n-type ohmic contact layer; and finally, forming pads on both first and second ohmic contact electrodes.