Formosa Epitaxy Incorporation

Chung Shan Institute of Science and Technology

Wen-How Lan

Fen-Ren Chien

Lung-Chien Chen

Ya-Tung Cherng

Jia-Ching Lin

Ker-Jun Lin

Kai-Fung Perng

Yuh-Der Shiang

Feng-Ku Chien

Kuang-Neng Yang

A nitride based semiconductor laser diode device comprising a selective growth mask with a grating structure is proposed. The island-like stacked epitaxial layers including the P-type cladding layer is formed from the selective growth mask upon the active layer of the semiconductor laser structure. This proposed structure can reduce the strain by the deformation due to the isolate structure. Thus, increase of thickness of the cladding layer and/or increase of composition difference can be achieved without crack existing in the island-like stacked epitaxial layers. The optical confinement can be effectively improved.

Nitride based semiconductor laser diode device with a bar mask

A method for manufacturing a GaN-based light-emitting diode (LED) is provided with the following steps of: providing a substrate; forming a GaN semiconductor epitaxy layer on the substrate, the GaN semiconductor epitaxy layer further including an n-type GaN contact layer, a light-emitting layer and a p-type GaN contact layer; forming a digital penetration layer on the p-type GaN contact layer; using a multi-step dry etching method to etch the digital penetration layer, the p-type GaN contact layer, the light-emitting layer to form an n-metal forming area, etching terminating at the light-emitting layer; forming a first ohmic contact electrode on the digital penetration layer for a p-type ohmic contact layer and a second ohmic contact electrode on the n-metal forming area for an n-type ohmic contact layer; and finally, forming pads on both first and second ohmic contact electrodes.

Structure and manufacturing method for nitride-based light-emitting diodes

A GaN semiconductor stack layer is formed on top of a substrate for manufacturing a light emitting diode. The GaN semiconductor stack layer includes, from the bottom up, an N-type GaN contact layer, a light emitting stack layer and a P-type contact layer. The next step is to form a digital transparent layer on the P-type GaN contact layer, then use dry etching technique to etch downward through the digital transparent layer, the P-type GaN contact layer, the light emitting layer, the N-type GaN contact layer, and form an N-metal forming area within the N-type GaN contact layer. The next step is to form a first ohmic contact electrode on the P-type contact layer to serve as P-type ohmic contact, and a second ohmic contact electrode on the N-metal forming area to serve as N-type ohmic contact. Finally, a bump pad is formed on the first ohmic contact electrode and the second ohmic contact electrode, respectively.

Structure and manufacturing method for GaN light emitting diodes

A white LED device includes a member, a plurality of LEDs, fixed on the member, the LEDS further comprising blue GaN LEDs, a reflector, in parabolic shape, to encase thed member and the plurality of LEDs, yellow phosphor, coated on the surface of the reflector facing the LEDs, and a supporting component, for connecting the member and the reflector in order to connect the LEDs, the member and the reflector together. The main feature of the present invention includes that the LEDs emit blue light when positively biased. The blue light triggers yellow phosphor to generate a yellow light, and the blue light mixed with the yellow light to become a white light. The white light is reflected by the reflector to project onto target objects.

Device of white light-emitting diode

A growth-selective structure of LED is created by growing first and patterning an oxidation layer on a substrate, then applying a lateral-growth technology to form a buffer layer on the oxidation layer selectively, and an n-GaN layer, an active layer, and a p-GaN layer on the buffer layer one after another.

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Taoyuan, Taiwan

Wen-How Lan