The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 2007
Filed:
May. 27, 2005
Wen-how Lan, Taoyuan County, TW;
Yuh-der Shiang, Taichung, TW;
Jia-ching Lin, Taipei County, TW;
Ker-jun Lin, Hsinchu County, TW;
Kai-fung Perng, Hsinchu County, TW;
Ya-tung Cherng, Taoyuan County, TW;
Wen-How Lan, Taoyuan County, TW;
Yuh-Der Shiang, Taichung, TW;
Jia-Ching Lin, Taipei County, TW;
Ker-Jun Lin, Hsinchu County, TW;
Kai-Fung Perng, Hsinchu County, TW;
Ya-Tung Cherng, Taoyuan County, TW;
Chung-Shan Institute of Science and Technology, Taoyuan, TW;
Abstract
A nitride based semiconductor laser diode device comprising a selective growth mask with a grating structure is proposed. The island-like stacked epitaxial layers including the P-type cladding layer is formed from the selective growth mask upon the active layer of the semiconductor laser structure. This proposed structure can reduce the strain by the deformation due to the isolate structure. Thus, increase of thickness of the cladding layer and/or increase of composition difference can be achieved without crack existing in the island-like stacked epitaxial layers. The optical confinement can be effectively improved.