Wei Zhang

Title: Innovations of Wei Zhang in Semiconductor Technology

Introduction

Wei Zhang is a prominent inventor based in Tsukuba, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of ferroelectric field effect transistors.

Latest Patents

Wei Zhang holds two notable patents. His latest invention is a semiconductor ferroelectric storage transistor and method for manufacturing the same. This invention provides a ferroelectric field effect transistor (FeFET) that maintains a wide memory window even when the ferroelectric film thickness is 200 nm or less. It exhibits excellent data retention characteristics and pulse rewriting endurance. The structure of the FeFET includes an insulating body and a gate electrode conductor, which are sequentially laminated on a semiconductor base that features a source region and a drain region. The insulating body is composed of a first insulating body and a second insulating body, with the latter primarily made of an oxide of strontium, calcium, bismuth, and tantalum.

Career Highlights

Wei Zhang is affiliated with the National Institute of Advanced Industrial Science and Technology, where he continues to push the boundaries of semiconductor research and innovation. His work has been instrumental in advancing the capabilities of memory storage technologies.

Collaborations

Wei Zhang has collaborated with notable colleagues, including Shigeki Sakai and Mitsue Takahashi, contributing to various projects that enhance the field of semiconductor technology.

Conclusion

Wei Zhang's innovative work in semiconductor technology, particularly with ferroelectric field effect transistors, showcases his commitment to advancing the industry. His contributions are paving the way for future developments in memory storage solutions.