National Institute of Advanced Industrial Science and Technology

Wei Zhang

Shigeki Sakai

Mitsue Takahashi

Provided is a ferroelectric field effect transistor (FeFET) which has a wide memory window even if the ferroelectric film thickness is 200 nm or less, and which has excellent data retention characteristics, pulse rewriting endurance and the like. An FeFET which has a structure wherein an insulating body () and a gate electrode conductor () are sequentially laminated in this order on a semiconductor base () that has a source region () and a drain region (). The insulating body () is configured by laminating a first insulating body () and a second insulating body () in this order on the base (), and the second insulating body () is mainly composed of an oxide of strontium, calcium, bismuth and tantalum.

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Tsukuba, Japan

Wei Zhang