Wei Yue

Title: Wei Yue - Innovator in High Voltage LDMOS Technology

Introduction

Wei Yue is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of high voltage LDMOS devices. His innovative work has led to advancements that enhance the performance and reliability of electronic components.

Latest Patents

Wei Yue holds a patent for a "High voltage LDMOS device with an increased voltage at source (high side) and a fabricating method thereof." This invention features a high voltage LDMOS device that incorporates an n-type buried layer and a p-type buried layer situated on the interface between a p-type substrate and an n-type epitaxial layer. The design ensures that the lateral surfaces of the n-type and p-type buried layers do not contact each other, which increases the withstand voltage between them. Additionally, the p-type buried layer overlaps with the drain in a vertical direction, allowing it to exert a reduced surface field action on the drain, thereby enhancing the drain's withstand voltage against the source.

Career Highlights

Wei Yue is currently employed at Shanghai Huahong Grace Semiconductor Manufacturing Corporation, where he continues to push the boundaries of semiconductor innovation. His work has been instrumental in developing technologies that are crucial for modern electronic devices.

Collaborations

Throughout his career, Wei Yue has collaborated with talented individuals such as Junjun Xing and Wenqing Yang. These partnerships have fostered a creative environment that encourages the exchange of ideas and the development of groundbreaking technologies.

Conclusion

Wei Yue's contributions to high voltage LDMOS technology exemplify the impact of innovative thinking in the semiconductor industry. His patent and ongoing work at Shanghai Huahong Grace Semiconductor Manufacturing Corporation highlight his role as a key player in advancing electronic component technology.