The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2017
Filed:
Dec. 29, 2015
Shanghai Huahong Grace Semiconductor Manufacturing Corporation, Shanghai, CN;
Abstract
A high voltage LDMOS device having high side source voltage, an n type buried layer and a p type buried layer situated on the interface between a p type substrate and an n type epitaxial layer; a lateral surface of the n type buried layer and a lateral surface of the p type buried layer not in contact, and are distant from one another with a distance, thereby increasing the withstand voltage between the n type buried layer and the p type buried layer; the p type buried layer and the drain overlap at least partially in a vertical direction, enabling the p type buried layer to exert a reduced surface field action on the drain, to increase the withstand voltage of the drain against the source; the source and the body terminal centrally on top of the n type buried layer.