Hsinchu, Taiwan

Wei Ming Chen

This inventor holds 1 USPTO granted patent. Top assignee: Macronix International Co., Ltd.. Active years: 2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Wei Ming Chen. Retrieved from https://idiyas.com/inventor/wei-ming-chen-fmzqvp81

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1


Company Filing History:


Years Active: 2014

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1 patent (USPTO):Explore Patents

Title: Innovations of Wei Ming Chen

Wei Ming Chen is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology. His work has led to the development of innovative solutions that enhance the performance and efficiency of electronic devices.

Latest Patents

Wei Ming Chen holds a patent for a semiconductor hole structure. This invention involves a first dielectric layer formed over a substrate, with a second dielectric layer placed over the first. A first opening is created in the second dielectric layer, while a second opening is formed in the first dielectric layer. This innovative structure is crucial for improving semiconductor device performance.

Career Highlights

Wei Ming Chen is currently employed at Macronix International Co., Ltd. His role at the company allows him to work on cutting-edge semiconductor technologies. His expertise in this field has positioned him as a valuable asset to his team and the industry.

Collaborations

Wei Ming Chen collaborates with Nien-Yu Tsai, a talented woman in the field. Together, they work on advancing semiconductor technologies and contribute to the innovative projects at Macronix International Co., Ltd.

Conclusion

Wei Ming Chen's contributions to semiconductor technology through his patent and collaboration with Nien-Yu Tsai highlight his importance in the field. His work continues to influence the development of efficient electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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