The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2014
Filed:
Sep. 10, 2012
Applicants:
Nien-yu Tsai, Hsinchu, TW;
Wei Ming Chen, Hsinchu, TW;
Inventors:
Nien-Yu Tsai, Hsinchu, TW;
Wei Ming Chen, Hsinchu, TW;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
Abstract
A first dielectric layer is formed over a substrate. A second dielectric layer is formed over the first dielectric layer. A first opening is formed in the second dielectric layer. A second opening is formed in the first dielectric layer.