Wei-Lun Huang

Title: Wei-Lun Huang: Innovator in Semiconductor Technology

Introduction: Wei-Lun Huang is a prominent inventor based in Tainan, Taiwan. He is affiliated with National Cheng Kung University, where he contributes to advancements in semiconductor technology. Despite having no granted patents, his work in the field is noteworthy.

Latest Patent Applications: Wei-Lun Huang has submitted several patent applications that showcase his innovative approaches. One of his latest applications is titled "Semiconductor Structure with Flush Shallow Trench Isolation and Gate Oxide and Method of Manufacturing the Same." This application details a method for manufacturing a semiconductor structure that includes performing a first etching process to remove a pad oxide layer at one side of a shallow trench isolation (STI) and recessing the substrate. The process also forms a recess portion not covered by the first etching process and a protruding portion covered by it on the STI. The application further describes forming a gate oxide layer on the recessed substrate and performing additional etching processes to achieve a flush top plane of the STI with the gate oxide layer.

Another significant application is "Semiconductor Structure and Fabrication Method Thereof." This application describes a semiconductor structure that includes a substrate with a first device region and a second device region in proximity. It details the configuration of a trench isolation structure that separates these regions, highlighting the differences in bottom and top surfaces within the device regions.

Conclusion: Wei-Lun Huang's contributions to semiconductor technology through his innovative patent applications reflect his dedication to advancing the field. His work at National Cheng Kung University positions him as a key figure in the ongoing development of semiconductor structures.