Shanghai, China

Wei Gong

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignees: Nexperia B.v., Nexperia Technology (Shanghai) Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Wei Gong. Retrieved from https://idiyas.com/inventor/wei-gong-jk9yitd6

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Wei Gong - Innovator in Power Semiconductor Technology

Introduction

Wei Gong is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of power semiconductor devices. His innovative work focuses on improving the performance and efficiency of these devices.

Latest Patents

Wei Gong holds a patent for a "Package structure for power semiconductor devices with improved parasitic parameters." This patent describes a package structure that includes a substrate and two or more semiconductor dies. Each semiconductor die features a first power switching pad, a second power switching pad, and a gate. The design incorporates a gate control conductive trace, along with first and second power switching contacts arranged on the substrate. This innovative structure enhances the performance of power semiconductor devices.

Career Highlights

Wei Gong has worked with notable companies in the semiconductor industry, including Nexperia Technology (Shanghai) Ltd. and Nexperia B.V. His experience in these organizations has allowed him to develop and refine his expertise in semiconductor technology.

Collaborations

Throughout his career, Wei Gong has collaborated with talented professionals such as Chunlin Zhu and Ke Jiang. These collaborations have contributed to the advancement of semiconductor technology and innovation.

Conclusion

Wei Gong's contributions to the field of power semiconductor devices demonstrate his commitment to innovation and excellence. His patent and career achievements reflect his significant impact on the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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