Warren Gray

Title: Warren Gray and Semiconductor Subfin Replacement

Introduction

Warren Gray is an inventor based in Oregon City, Oregon, whose patent work addresses semiconductor device design. He is associated with Intel Corporation and is named on 1 patent.

Latest Patents

Gray’s patent, “Subfins replaced using backside dielectric formation,” describes techniques for removing semiconductor subfins and replacing them with dielectric materials. The process involves removing bulk substrate material from the backside to expose the subfin, removing the subfin to create recesses, and filling those recesses with a dielectric liner and dielectric material.

The invention aims to reduce parasitic capacitance between subfins and gate electrodes, as well as parasitic current between neighboring source or drain regions. These improvements can support more effective isolation within semiconductor devices.

Career Highlights

Gray’s listed patent reflects work on semiconductor fabrication and device isolation. His association with Intel Corporation places this invention within the company’s broader semiconductor technology efforts.

Collaborations

Gray’s listed coworkers include Giorgio Mariottini and Jamie Wilt. Their names provide context for his professional connections, though the supplied information does not specify their roles in the patent.

Conclusion

Warren Gray’s patent presents a backside fabrication approach that replaces semiconductor subfins with dielectric materials to improve electrical isolation and reduce parasitic effects.